An Improved Parasitic Parameters Extraction Method for InP HEMT
DUAN Lanyan1, LU Hongliang2, QI Junjun1, ZHANG Yuming2, ZHANG Yimen2
(1. ZTE Corporation, Shenzhen 518057, China;
2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi' an 710071, China)
In this paper, an improved parasitic parameter extraction method for InP high electron mobility transistor (HEMT) is presented. Parasitic parameter extraction is the first step of model parameter extraction and its accuracy has a great impact on the subsequent internal parameter extraction. It is necessary to accurately determine and effectively eliminate the parasitic effect, so as to avoid the error propagation to the internal circuit parameters. In order to obtain higher accuracy of parasitic parameters, parasitic parameters are extracted in this paper based on traditional analytical method and optimization algorithm to obtain the best parasitic parameters. The validity of the proposed parasitic parameter extraction method has been verified with excellent agreement between the measured and modeled S-parameters up to 40 GHz for InP HEMT. In 0.1–40 GHz InP HEMT, the average relative error of the optimization algorithm is about 9% higher than that of the analysis method, which verifies the validity of the parasitic parameter extraction method. The extraction of parasitic parameters not only provides a foundation for the high-precision extraction of small signal intrinsic parameters of HEMT devices, but also lays a foundation for the high-precision extraction of equivalent circuit model parameters of large signal and noise signals of HEMT devices.
parasitic parameters; open-short test structure; parameter extraction; HEMT