基于130 nm SiGe BiCMOS工艺的相控阵H波段滑动中频收发机芯片组

摘要：提出了一种面向太赫兹相控阵应用的高性能H波段发射机和接收机芯片组，该芯片组采用了滑动中频移相架构。所用收发机由一个以功率放大器（PA）为末级的发射机和一个以低噪声放大器（LNA）为首级的接收机组成。该芯片组基于130 nm SiGe BiCMOS工艺流片实现。测试结果表明，发射机在246～282 GHz频率范围内表现出优异的宽带性能，其峰值变频增益（CG）为24.9 dB，输出功率为8.5 dBm。接收机实现了15.5 dB的峰值变频增益，最大输入1dB压缩点为﹣22.5 dBm，在248~258 GHz范围内的仿真最小噪声系数（NF）为14.2 dB。该收发机还具备6位移相能力，其均方根（RMS）增益误差为0.16 dB，RMS相位误差为1.2°。所提架构和电路技术为硅基太赫兹相控阵系统提供了一种极具前景的解决方案。

关键词：太赫兹；收发机；滑动中频；PA-Last发射机；LNA-First接收机

Abstract: This paper presents a high-performance H-band transmitter and receiver chipset that employs a sliding intermediate-frequency phase-shifting architecture for terahertz phased-array applications. This transceiver consists of a PA-last transmitter and an LNA-first receiver. Fabricated in a 130 nm SiGe BiCMOS technology, the transmitter demonstrates broadband performance from 246 GHz to 282 GHz with a peak conversion gain (CG) of 24.9 dB and an output power of 8.5 dBm. The receiver achieves a peak CG of 15.5 dB, a maximum input 1 dB compression point (IP1dB) of ﹣22.5 dBm, and a simulated minimum noise figure (NF) of 14.2 dB over 248﹣258 GHz. The transceiver also provides 6-bit phase-shifting capability with 0.16 dB RMS gain error and 1.2° RMS phase error. The proposed architecture and circuit techniques offer a promising solution for silicon-based THz phased-array systems.

Keywords: terahertz; transceiver; sliding intermediate-frequency; PA-last transmitter; LNA-first receiver