摘要：异质异构集成通过二维/三维低损耗互连，将互补金属氧化物半导体（CMOS）、硅锗（SiGe）、氮化镓（GaN）和磷化铟（InP）等不同工艺芯片协同集成，可根据星地收发链路中不同功能模块的性能需求实现最优分工。研究表明，低损耗异构互连、三维堆叠及芯片—封装协同设计能够极大缩短极高频信号路径，提高功能密度，并充分发挥III-V族器件在高功率和低噪声方面的绝对优势，为突破星地太赫兹高速无线传输和星载/地面大规模相控阵系统的性能瓶颈提供了核心技术路径。

关键词：星地通信；亚太赫兹/太赫兹；高速传输；收发前端；III-V半导体；异质异构集成；三维集成

Abstract: Heterogeneous integration enables the coordinated integration of complementary metal-oxide-semiconductor (CMOS), silicon-germanium (SiGe), gallium nitride (GaN), and indium phosphide (InP) chips through low-loss two-dimensional and three-dimensional interconnects, allowing different functional blocks in the space–ground transceiver chain to be optimally assigned according to their performance requirements. Studies show that low-loss heterogeneous interconnects, three-dimensional stacking, and chip–package co-design can significantly shorten extremely high-frequency signal paths, enhance functional density, and fully exploit the significant advantages of III-V devices in high-power and low-noise performance, thereby providing a core technological pathway for overcoming the performance bottlenecks of high-speed space–ground terahertz wireless transmission and large-scale spaceborne and ground-based phased-array systems.

Keywords: satellite-to-ground communication; sub-terahertz/terahertz (Sub-THz/THz); high-speed transmission; transceiver front-end; III-V semiconductors; heterogeneous integration; 3D integration