硅光子芯片工艺与设计的发展与挑战

发布时间:2017-10-09 作者:郭进,冯俊波,曹国威 阅读量:

[摘要] 针对硅光子器件的特殊性提出了与互补金属氧化物半导体(CMOS)工艺兼容的硅光工艺开发的基本原则和关键问题。相比于工艺,硅光在芯片设计的方法和流程方面面临更多的挑战,例如硅光子技术与CMOS工艺兼容性,可重复IP制定及复杂芯片的快速设计等。故充分利用先进的半导体设备和工艺、个别工艺的特殊控制、多层次光电联合仿真是硅光子芯片从小规模设计走向大规模集成应用的关键。光子链路的仿真、器件行为级模型、版图的布局布线及验证等是硅光芯片走向成熟的关键。

[关键词] 硅基光子学;设计方法;设计流程;大规模集成

[Abstract] In this paper, the fundamental principles and key issues of the silicon optical process compatible with complementary metal oxide semiconductor(CMOS) are described. Silicon optics faces many challenges in terms of chip design methods and processes, including the process compatibility of CMOS and silicon photonics, the design of repeatable IP and the quick design of complicate chips. To achieve the change from small scale design to the large scale integrated application, some issues should be emphasized, including the full use of the advanced semi-conductor equipment and process, the control of some special processes and the simulation and design of opto-electronics devices. And the optical link simulation, behavior level model, floor planning, placement and routing, and the layout verification are the key factors to the maturity of silicon optical chip.

[Keywords] silicon photonics; design methodology; design flow; large scale integration

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